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Embedded Chips

Embedded Storage

BIWIN nMCP

Solving the higher cost of mobile storage with NAND flash with an LPDDR2/3 solution, nMCP features a smaller size, higher capacities, and lower power consumption. By stacking the NAND flash and using low-power SRAM, we release more PCB space. The stacked die can achieve higher performance, better integration, and yet a lower power consumption.

Save budget as well as space: nMCP is more efficient than the single chip encapsulation and the cost is lower than the independent chip combination.

Examples of Applications

Mobile Phone
Mobile Phone
Wearable Device
Educational Device
Tablet
Tablet
Smart TV
Smart TV
Biwin Product
Interface
NAND
NAND
LPDDR2
LPDDR2
Dimensions
NAND
8.0 x 10.5 x 0.9 mm
NAND~LPDDR2
LPDDR2
Package
NAND
NAND~LPDDR2
FBGA162
LPDDR2
Capacity
NAND
1 GB / 2 GB / 4 GB
NAND~LPDDR2
1 GB / 2 GB / 4 GB
LPDDR2
Max. Sequential Read (MB/s)
NAND
NAND~LPDDR2
LPDDR2
Max. Sequential Write (MB/s)
NAND
NAND~LPDDR2
LPDDR2
Working Voltage
NAND
VCCQ = 1.8 V, VCC = 3.3 V
LPDDR2
VDD1 = 1.8 V, VDDR2 = 1.1 V, VDDQ = 0.6 V
Working Temperature
NAND
NAND~LPDDR2
-20 ℃ - 85 ℃
LPDDR2

We are here to answer any question you may have.

BIWIN TECHNOLOGY LLC

8725 NW 18th Terrace

Suite #401

Miami FL 33172

United States

Tax ID number: 83-4697474

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